Layer- and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductor

Journal:
Science Advances
Published:
DOI:
10.1126/sciadv.abe2892
Affiliations:
5
Authors:
17
Institutions Authors Share
National High Magnetic Field Laboratory (NHMFL), United States of America (USA)
8.000000
0.47
The Ohio State University (OSU), United States of America (USA)
7.000000
0.41
Research Center for Functional Materials (RCFM), NIMS, Japan
1.000000
0.06
WPI International Center for Materials Nanoarchitectonics (WPI-MANA), NIMS, Japan
1.000000
0.06