CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory

Journal:
Science Advances
Published:
DOI:
10.1126/sciadv.abe1341
Affiliations:
1
Authors:
3
Institutions Authors Share
Pohang University of Science and Technology (POSTECH), South Korea
3.000000
1.00