High-speed black phosphorus field-effect transistors approaching ballistic limit

Journal: Science Advances

Published: 2019-06-01

DOI: 10.1126/sciadv.aau3194

Affiliations: 3

Authors: 8

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Institutions Share
MOE Key Laboratory of Microelectronic Devices and Circuits, PKU, China 0.42
Wuhan National High Magnetic Field Center, HUST, China 0.29
School of Optical and Electronic Information (OEI), HUST, China 0.29