High-speed black phosphorus field-effect transistors approaching ballistic limit

Journal: Science Advances

Published: 2019-06-01

DOI: 10.1126/sciadv.aau3194

Affiliations: 3

Authors: 8

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MOE Key Laboratory of Microelectronic Devices and Circuits, PKU, China 0.42
Wuhan National High Magnetic Field Center, HUST, China 0.29
School of Optical and Electronic Information (OEI), HUST, China 0.29

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