Origin of anomalous temperature dependence of the Nernst effect in narrow-gap semiconductors

Journal:
Physical Review B
Published:
DOI:
10.1103/physrevb.103.l041202
Affiliations:
2
Authors:
3
Institutions Authors Share
The University of Tokyo (UTokyo), Japan
2.500000
0.83
RIKEN Center for Emergent Matter Science (CEMS), Japan
0.500000
0.17