Large enhancement of thermoelectric performance in MoS2/h-BN heterostructure due to vacancy-induced band hybridization.

Journal: Proceedings of the National Academy of Sciences of the United States of America

Published: 2020-06-10

DOI: 10.1073/pnas.2007495117

Affiliations: 12

Authors: 15

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Institutions Share
National University of Singapore (NUS), Singapore 0.47
Institute of Materials Research and Engineering (IMRE), A*STAR, Singapore 0.16
Advanced Materials Laboratory (AML), NIMS, Japan 0.13
SYSU-MU Joint Key Laboratory of the Ministry of Education, China 0.07
Institute of High Performance Computing (IHPC), A*STAR, Singapore 0.07
SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, China 0.04
Nanjing University of Aeronautics and Astronautics (NUAA), China 0.02
Nanjing Normal University (NNU), China 0.02
Nanyang Technological University (NTU), Singapore 0.02

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