Large enhancement of thermoelectric performance in MoS2/h-BN heterostructure due to vacancy-induced band hybridization.

Journal: Proceedings of the National Academy of Sciences of the United States of America

Published: 2020-06-10

DOI: 10.1073/pnas.2007495117

Affiliations: 12

Authors: 15

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Institutions Share
NUS Centre for Advanced 2D Materials (CA2DM) and Graphene Research Centre (GRC), Singapore 0.24
Institute of Materials Research and Engineering (IMRE), A*STAR, Singapore 0.16
Advanced Materials Laboratory (AML), NIMS, Japan 0.13
NUS Department of Electrical and Computer Engineering (ECE), Singapore 0.11
SYSU-MU Joint Key Laboratory of the Ministry of Education, China 0.07
NUS Department of Physics, Singapore 0.07
Institute of High Performance Computing (IHPC), A*STAR, Singapore 0.07
NUS Department of Chemistry, Singapore 0.04
SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, China 0.04
MOE Key Laboratory for Intelligent Nano Materials and Devices, NUAA, China 0.02
School of Physical Science and Technology, NNU, China 0.02
School of Materials Science and Engineering (MSE), NTU, Singapore 0.02

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