Hybrid memory characteristics of NbOx threshold switching devices

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0061435
Affiliations:
2
Authors:
3
Institutions Authors Share
Pohang University of Science and Technology (POSTECH), South Korea
2.000000
0.67
Kyungpook National University (KNU), South Korea
1.000000
0.33