High performance ferroelectric ZnO thin film transistor using AlOx/HfZrO/ZrOx gate insulator by spray pyrolysis

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0058127
Affiliations:
3
Authors:
7
Institutions Authors Share
Kyung Hee University (KHU), South Korea
3.000000
0.43
Japan Advanced Institute of Science and Technology (JAIST), Japan
2.000000
0.29
Samsung Display Co., Ltd., South Korea
2.000000
0.29