Capping and gate control of anomalous Hall effect and hump structure in ultra-thin SrRuO3 films

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0050163
Affiliations:
3
Authors:
8
Institutions Authors Share
Institute for Basic Science (IBS), South Korea
3.000000
0.38
Seoul National University (SNU), South Korea
3.000000
0.38
Yonsei University, South Korea
2.000000
0.25