Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition

Journal: Applied Physics Letters

Published: 2021-04-22

DOI: 10.1063/5.0047821

Affiliations: 2

Authors: 7

Go to article
Institutions Share
University of California, Santa Barbara (UCSB), United States of America (USA) 0.71
Agnitron Technology, Inc., United States of America (USA) 0.29

Return