Radiation hardened H-diamond MOSFET (RADDFET) operating after 1 MGy irradiation

Journal: Applied Physics Letters

Published: 2021-04-20

DOI: 10.1063/5.0040645

Affiliations: 4

Authors: 5

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Institutions Share
Hokkaido University, Japan 0.60
Kansai Center, AIST, Japan 0.30
Sensing System Research Center (SSRC), AIST, Japan 0.10

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