High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

Journal: Applied Physics Letters

Published: 2021-01-12

DOI: 10.1063/5.0038628

Affiliations: 3

Authors: 11

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Institutions Share
North Carolina State University (NCSU), United States of America (USA) 0.50
Adroit Materials, Inc., United States of America (USA) 0.32
Institute of High Pressure Physics (UNIPRESS), PAS, Poland 0.18

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