Crossing and anticrossing of 1D subbands in a quantum point contact with in-plane side gates

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0038492
Affiliations:
2
Authors:
5
Institutions Authors Share
A.V. Rzhanov Institute of Semiconductor Physics (ISP), SB RAS, Russia
2.500000
0.50
Novosibirsk State University (NSU), Russia
2.500000
0.50