High performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p–n junctions

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0036343
Affiliations:
3
Authors:
7
Institutions Authors Share
Central South University (CSU), China
4.000000
0.57
Sungkyunkwan University (SKKU), South Korea
2.000000
0.29
University at Buffalo, The State University of New York (SUNY UB), United States of America (USA)
1.000000
0.14