Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

Journal: Applied Physics Letters

Published: 2021-01-25

DOI: 10.1063/5.0035957

Affiliations: 2

Authors: 15

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Institutions Share
North Carolina State University (NCSU), United States of America (USA) 0.77
Adroit Materials, Inc., United States of America (USA) 0.23

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