TiN/Gd:HfO2/TiN capacitors grown by PEALD showing high endurance ferroelectric switching

Journal: Applied Physics Letters

Published: 2020-12-21

DOI: 10.1063/5.0035706

Affiliations: 3

Authors: 6

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Institutions Share
Microelectronics Technology Laboratory (LTM), France 0.50
Grenoble Alpes University (UGA), France 0.25
CEA Laboratory of Electronics and Information Technology (LETI), France 0.25

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