Ferroelectric polarization retention with scaling of Hf0.5Zr0.5O2 on silicon

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0035579
Affiliations:
6
Authors:
8
Institutions Authors Share
The University of Texas at Dallas (UT Dallas), United States of America (USA)
4.333333
0.54
Brookhaven National Laboratory (BNL), United States of America (USA)
2.000000
0.25
Kangwon National University, South Korea
1.000000
0.13
Meiji University, Japan
0.333333
0.04
Japan Society for the Promotion of Science (JSPS), Japan
0.333333
0.04