Optimized InAlAs graded buffer and tensile-strained dislocation filter layer for high quality InAs photodetector grown on Si

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0032027
Affiliations:
3
Authors:
8
Institutions Authors Share
Korea Institute of Science and Technology (KIST), South Korea
5.500000
0.69
Korea University, South Korea
1.500000
0.19
KIST School, UST, South Korea
1.000000
0.13