MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor

Journal: Applied Physics Letters

Published: 2020-12-28

DOI: 10.1063/5.0031484

Affiliations: 4

Authors: 9

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Institutions Share
Agnitron Technology, Inc., United States of America (USA) 0.56
U.S. Air Force (USAF), United States of America (USA) 0.28
Iowa State University, United States of America (USA) 0.11
Wright State University, United States of America (USA) 0.06

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