Metal-insulator transition and doping-induced phase change in Ge2Sb2Se5xTe5−5x

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0030956
Affiliations:
2
Authors:
4
Institutions Authors Share
University of Virginia (UVA), United States of America (USA)
3.000000
0.75
Daegu Gyeongbuk Institute of Science and Technology (DGIST), South Korea
1.000000
0.25