High yield uniformity in pseudo-vertical diamond Schottky barrier diodes fabricated on half-inch single-crystal wafers

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0027729
Affiliations:
3
Authors:
4
Institutions Authors Share
Hokkaido University, Japan
2.000000
0.50
Department of Energy and Environment (DENVENE), AIST, Japan
1.500000
0.38
Sensing System Research Center (SSRC), AIST, Japan
0.500000
0.13