Thermometric quantum sensor using excited state of silicon vacancy centers in 4H-SiC devices

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0027603
Affiliations:
6
Authors:
10
Institutions Authors Share
Tokyo Institute of Technology (Tokyo Tech), Japan
4.000000
0.40
National Institutes for Quantum and Radiological Science and Technology (QST), Japan
3.500000
0.35
Department of Energy and Environment (DENVENE), AIST, Japan
1.000000
0.10
Gwangju Institute of Science and Technology (GIST), South Korea
1.000000
0.10
Hitachi, Ltd., Japan
0.500000
0.05