Terahertz photoresistivity of a high-mobility 3D topological insulator based on a strained HgTe film

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0025745
Affiliations:
4
Authors:
6
Institutions Authors Share
German-Russian THz-Center, Germany
2.500000
0.42
A.V. Rzhanov Institute of Semiconductor Physics (ISP), SB RAS, Russia
1.500000
0.25
Novosibirsk State University (NSU), Russia
1.500000
0.25
Ioffe Institute, RAS, Russia
0.500000
0.08