Formation of ultra-thin Ge1−xSnx/Ge1−x−ySixSny quantum heterostructures and their electrical properties for realizing resonant tunneling diode

Journal: Applied Physics Letters

Published: 2020-12-08

DOI: 10.1063/5.0024905

Affiliations: 6

Authors: 9

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Institutions Share
Nagoya University, Japan 0.67
Indonesian Institute of Sciences (LIPI), Indonesia 0.28
University of Luxembourg, Luxembourg 0.06

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