Charge transport mechanism in La:HfO2

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0021779
Affiliations:
3
Authors:
2
Institutions Authors Share
A.V. Rzhanov Institute of Semiconductor Physics (ISP), SB RAS, Russia
0.833333
0.42
Novosibirsk State University (NSU), Russia
0.833333
0.42
Novosibirsk State Technical University (NSTU), Russia
0.333333
0.17