Surface control and MBE growth diagram for homoepitaxy on single-crystal AlN substrates

Journal: Applied Physics Letters

Published: 2020-06-30

DOI: 10.1063/5.0010813

Affiliations: 4

Authors: 6

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Institutions Share
School of Electrical and Computer Engineering, Cornell University, United States of America (USA) 0.44
Asahi Kasei Corporation, Japan 0.33
Department of Materials Science and Engineering (MSE), Cornell University, United States of America (USA) 0.11
Kavli Institute at Cornell for Nanoscale Science (KIC), Cornell University, United States of America (USA) 0.11

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