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Thin film transistors based on ultra-wide bandgap spinel ZnGa2O4

Journal: Applied Physics Letters

Published: 2020-05-21

DOI: 10.1063/5.0007716

Affiliations: 2

Authors: 6

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Institutions Share
Institute of Applied Physics (IAP), SNU, South Korea 0.83
Leibniz Institute for Crystal Growth (IKZ), Germany 0.17

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