Enhancement of p-type conductivity of monolayer hexagonal boron nitride by driving Mg incorporation through low-energy path with N-rich condition

Journal: Applied Physics Letters

Published: 2020-05-26

DOI: 10.1063/5.0004923

Affiliations: 4

Authors: 9

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Institutions Share
Fujian Key Laboratory of Semiconductor Materials and Applications, XMU, China 0.30
Fujian Provincial Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, XMU, China 0.30
College of Physical Science and Technology, XMU, China 0.30
Institute of Atomic and Molecular Science, SUST, China 0.11

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