X-ray diffraction on La3Ga5SiO14 crystal modulated by SAW near the K absorption edge of Ga

Journal: Applied Physics Letters

Published: 2020-04-30

DOI: 10.1063/5.0002388

Affiliations: 9

Authors: 10

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Institutions Share
Institute of Microelectronics Technology and High Purity Materials, RAS, Russia 0.30
Institut Néel, France 0.10
Helmholtz-Zentrum Berlin for Materials and Energy (HZB), Germany 0.10
Institute for Nanometre Optics and Technology, HZB, Germany 0.10
Synchrotron SOLEIL, France 0.10
University of Potsdam, Germany 0.10
Department of Physics, UNICAL, Italy 0.10
French National Centre for Scientific Research (CNRS), France 0.05
Grenoble Alpes University (UGA), France 0.05

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