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Low voltage thin film transistors based on solution-processed In2O3:W. A remarkably stable semiconductor under negative and positive bias stress

Journal: Applied Physics Letters

Published: 2020-04-24

DOI: 10.1063/1.5142699

Affiliations: 3

Authors: 9

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Institutions Share
Department of Engineering, Lancaster University, United Kingdom (UK) 0.78
Department of Engineering, University of Cambridge, United Kingdom (UK) 0.17
Cambridge Touch Technologies Ltd., United Kingdom (UK) 0.06