Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN

Journal: Applied Physics Letters

Published: 2020-02-05

DOI: 10.1063/1.5139906

Affiliations: 5

Authors: 9

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Institutions Share
USC Ming Hsieh Department of Electrical and Computer Engineering (ECE), United States of America (USA) 0.33
Qorvo, Inc., United States of America (USA) 0.33
Center for Power Electronics Systems (CPES), Virginia Tech, United States of America (USA) 0.11
Bradley Department of Electrical and Computer Engineering (ECE), Virginia Tech, United States of America (USA) 0.11
Enkris Semiconductor Inc., China 0.11

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