Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes

Published: 2020-03-19

Affiliations: 6

Authors: 12

Institutions	Authors	Share
USN Naval Research Laboratory (NRL), United States of America (USA)		0.58
OSU Department of Electrical and Computer Engineering, United States of America (USA)		0.17
Department of Physics, Wright State University, United States of America (USA)		0.08
Department of Electrical Engineering, Wright State University, United States of America (USA)		0.08
Jacobs Engineering Group Inc., United States of America (USA)		0.08

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