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Evolution of 0.7 conductance anomaly in electric field driven ferromagnetic CuO junction based resistive random access memory devices

Journal: Applied Physics Letters

Published: 2020-02-04

DOI: 10.1063/1.5136290

Affiliations: 2

Authors: 2

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Institutions Share
Center for Single Atom-based Semiconductor Device, POSTECH, South Korea 0.50
Department of Materials Science and Engineering, POSTECH, South Korea 0.50

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