Investigation of gating effect in Si spin MOSFET

Journal: Applied Physics Letters

Published: 2020-01-13

DOI: 10.1063/1.5131823

Affiliations: 3

Authors: 9

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Institutions Share
Department of Electronic Science and Engineering, Kyoto University, Japan 0.56
Graduate School / School of Engineering Science, Osaka University, Japan 0.33
TDK Corporation, Japan 0.11

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