BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm

Journal: Applied Physics Letters

Published: 2020-01-16

DOI: 10.1063/1.5130590

Affiliations: 2

Authors: 14

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Institutions Share
OSU Department of Electrical and Computer Engineering, United States of America (USA) 0.79
Department of Electrical Engineering, SC, United States of America (USA) 0.21

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