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Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy

Journal: Applied Physics Letters

Published: 2020-03-03

DOI: 10.1063/1.5125605

Affiliations: 3

Authors: 8

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Institutions Share
Department of Materials, UCSB, United States of America (USA) 0.56
Laboratoire de Physique de la Matière Condensée (LPMC), France 0.31
Institute of Applied Research, VU, Lithuania 0.13