Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 μm

Journal: Applied Physics Letters

Published: 2020-01-16

DOI: 10.1063/1.5124812

Affiliations: 4

Authors: 14

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Institutions Share
Institut für Festkörperphysik (IFFP), TU Berlin, Germany 0.43
Laboratory for Optical Spectroscopy of Nanostructures (OSN), WRUT, Poland 0.36
Institute of High Pressure Physics (UNIPRESS), PAS, Poland 0.14
Department of Theoretical Physics, WRUT, Poland 0.07