Controllable growth of P-type graphene on the boron ion-implanted Si-face of SiC (0001)

Journal: Applied Physics Letters

Published: 2019-11-26

DOI: 10.1063/1.5124418

Affiliations: 5

Authors: 5

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Institutions Share
Beijing National Laboratory for Condensed Matter Physics, IOP CAS, China 0.35
Research and Development Center for Functional Crystals, IOP CAS, China 0.35
School of Physical Sciences, UCAS, China 0.13
CAS Songshan Lake Materials Laboratory, China 0.12
Center of Materials Science and Optoelectronics Engineering, UCAS, China 0.05

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