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Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors

Journal: Applied Physics Letters

Published: 2019-11-25

DOI: 10.1063/1.5123374

Affiliations: 3

Authors: 8

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Institutions Share
Thin Film Physics Division, LiU, Sweden 0.50
SweGaN AB, Sweden 0.25
Institute of Electronics, Microelectronics and Nanotechnology (IEMN), France 0.25

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