Strain engineering on the metal-insulator transition of VO2/TiO2 epitaxial films dependent on the strain state of vanadium dimers

Journal: Applied Physics Letters

Published: 2019-12-18

DOI: 10.1063/1.5121876

Affiliations: 8

Authors: 9

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Institutions Share
National Synchrotron Radiation Laboratory (NSRL), USTC, China 0.30
School of Microelectronics, BUAA, China 0.20
Fert Beijing Institute, BUAA, China 0.14
Beijing Advanced Innovation Center for Big Data and Brain Computing (BDBC), BUAA, China 0.14
Beijing Advanced Sciences and Innovation Center (BASIC), CAS, China 0.11
Hefei Innovation Research Institute, BUAA, China 0.06
Laboratory of Quantum Materials and Interfaces, HFUT, China 0.06

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