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Suppression of substrate coupling in GaN high electron mobility transistors (HEMTs) by hole injection from the p-GaN gate

Journal: Applied Physics Letters

Published: 2019-11-12

DOI: 10.1063/1.5121637

Affiliations: 3

Authors: 9

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Institutions Share
Infineon Technologies Americas Corp., United States of America (USA) 0.56
Department of Engineering, University of Cambridge, United Kingdom (UK) 0.33
Infineon Technologies Austria AG, Austria 0.11

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