Notice

The database server is currently not answering requests properly. Some pages are still available due to caching. We are investigating the situation and will keep you updated.

Understanding tunneling electroresistance effect through potential profile in Pt/Hf0.5Zr0.5O2/TiN ferroelectric tunnel junction memory

Journal: Applied Physics Letters

Published: 2019-10-09

DOI: 10.1063/1.5119948

Affiliations: 2

Authors: 5

Go to article
Institutions Share
Department of Nano-Optical Engineering, Korea Polytechnic University, South Korea 0.80
Department of Materials Science and Chemical Engineering, HYU, South Korea 0.20

Return