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Understanding tunneling electroresistance effect through potential profile in Pt/Hf0.5Zr0.5O2/TiN ferroelectric tunnel junction memory

Journal: Applied Physics Letters

Published: 2019-10-09

DOI: 10.1063/1.5119948

Affiliations: 2

Authors: 5

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Institutions Share
Department of Nano-Optical Engineering, Korea Polytechnic University, South Korea 0.80
Department of Materials Science and Chemical Engineering, HYU, South Korea 0.20