The database server is currently not answering requests properly. Some pages are still available due to caching. We are investigating the situation and will keep you updated.

Characteristics of ferroelectric field effect transistors composed of a ferroelectric Bi3TaTiO9 gate stack and a single-layer MoS2 channel

Journal: Applied Physics Letters

Published: 2019-12-11

DOI: 10.1063/1.5119770

Affiliations: 2

Authors: 3

Go to article
Institutions Share
Department of Applied Physics, KHU, South Korea 0.50
Institute of Natural Sciences (INS), KHU, South Korea 0.50