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Characteristics of ferroelectric field effect transistors composed of a ferroelectric Bi3TaTiO9 gate stack and a single-layer MoS2 channel

Journal: Applied Physics Letters

Published: 2019-12-11

DOI: 10.1063/1.5119770

Affiliations: 2

Authors: 3

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Institutions Share
Department of Applied Physics, KHU, South Korea 0.50
Institute of Natural Sciences (INS), KHU, South Korea 0.50

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