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Improved characteristics of MOS interface between In0.53Ga0.47As and insulator by H2 annealing with Pt gate electrode

Journal: Applied Physics Letters

Published: 2019-09-30

DOI: 10.1063/1.5111377

Affiliations: 3

Authors: 9

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Institutions Share
Center of Opto-Electronic Materials and Devices, KIST, South Korea 0.44
KAIST School of Electrical Engineering (EE), South Korea 0.33
Center for Spintronics Research, KIST, South Korea 0.22

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