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Nonvolatile reversible capacitance changes through filament formation in a floating-gate metal-oxide-semiconductor capacitor with Ag/CeOx/Pt/HfOx/n-Si structure

Journal: Applied Physics Letters

Published: 2019-08-14

DOI: 10.1063/1.5109929

Affiliations: 2

Authors: 5

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Institutions Share
Department of Materials Engineering, Myongji University, South Korea 0.80
Department of Physics, Myongji University, South Korea 0.20