Epi-Gd₂O₃/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application

Journal: Applied Physics Letters

Published: 2019-08-08

DOI: 10.1063/1.5109861

Affiliations: 4

Authors: 14

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Institutions Share
Department of Electrical Engineering, IIT Bombay, India 0.36
Department of Electronics and Nanoengineering (ELE), Aalto University, Finland 0.29
Department of Physics, IIT Bombay, India 0.21
Institute of Electronic Materials and Devices (MBE), LUH, Germany 0.14

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