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Compliance current and temperature effects on non-volatile memory switching and volatile switching dynamics in a Cu/SiOx/p++-Si device

Journal: Applied Physics Letters

Published: 2019-11-19

DOI: 10.1063/1.5109081

Affiliations: 3

Authors: 8

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Institutions Share
Department of Electronic Engineering, Chungbuk National University, South Korea 0.50
Microelectronics Research Center (MRC), UT Austin, United States of America (USA) 0.25
Department of Electronics Engineering, Sejong University, South Korea 0.25

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