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Effect of exciton transfer on recombination dynamics in vertically nonuniform GaAsSb epilayers

Journal: Applied Physics Letters

Published: 2019-06-25

DOI: 10.1063/1.5105343

Affiliations: 3

Authors: 7

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Institutions Share
National Laboratory for Infrared Physics, SITP CAS, China 0.50
Department of Physics, Chemistry and Biology (IFM), LiU, Sweden 0.43
University of Chinese Academy of Sciences (UCAS), China 0.07

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