Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3

Journal: Applied Physics Letters

Published: 2018-08-30

DOI: 10.1063/1.5049130

Affiliations: 7

Authors: 12

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Institutions FC
National University of Science and Technology (MISIS), Russia 0.42
Department of Chemical Engineering, UF, United States of America (USA) 0.25
Department of Materials Science and Engineering (MSE), UF, United States of America (USA) 0.08
Department of Chemical and Biological Engineering (CBE), KU, South Korea 0.08
A.I. Alikhanov Institute of Theoretical and Experimental Physics (ITEP), NRCKI, Russia 0.08
Institute of Microelectronics Technology and High Purity Materials, RAS, Russia 0.04
A.N. Frumkin Institute of Physical Chemistry and Electrochemistry (IPCE), RAS, Russia 0.04

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