Tuning the optical properties of InAs QDs by means of digitally-alloyed GaAsSb strain reducing layers

Journal: Applied Physics Letters

Published: 2018-09-05

DOI: 10.1063/1.5048475

Affiliations: 2

Authors: 6

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Institutions FC
National Center for Nanotechnology, KACST, Saudi Arabia 0.75
School of Electrical and Electronic Engineering (EEE), UoM, United Kingdom (UK) 0.25

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