Enhanced p-type conduction in AlGaN grown by metal-source flow-rate modulation epitaxy

Journal: Applied Physics Letters

Published: 2018-08-14

DOI: 10.1063/1.5040334

Affiliations: 2

Authors: 12

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Institutions FC
National Key Laboratory of Monolithic Integrated Circuits and Modules, CETC55, China 0.79
Jiangsu Province Key Laboratories for Photonic and Electronic Materials, NJU, China 0.21

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